TSM500P02DCQ RFG
MOSFET 2 P-CH 20V 4.7A 6TDFN
Transistors Fets Mosfets Arrays
6-VDFN Exposed Pad
Active
$1.25 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM500P02DCQ RFG |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 50mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 800mV @ 250µA |
| Gate Charge (Qg) | 9.6nC @ 4.5V |
| Input Capacitance (Ciss) | 1230pF @ 10V |
| Power Dissipation (Max) | 620mW |
| Supplier Device Package | 6-TDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TSM500P02DCQ RFG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM500P02DCQ RFG
Alternatives & Replacements
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POWER, N-CHANNEL MOSFET
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TSM2537CQ RFG
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
FDMA1025P
MOSFET 2P-CH 20V 3.1A 6MICROFET
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 620mW |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
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