Taiwan Semiconductor Corporation6-VDFN Exposed PadRoHS
TSM250N02DCQ RFG
MOSFET 2 N-CH 20V 5.8A 6TDFN
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-VDFN Exposed Pad
Status
Active
Datasheet
$1.06 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM250N02DCQ RFG |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 25mOhm @ 4A, 4.5V |
| Vgs(th) (Max) | 800mV @ 250µA |
| Gate Charge (Qg) | 7.7nC @ 4.5V |
| Input Capacitance (Ciss) | 775pF @ 10V |
| Power Dissipation (Max) | 620mW |
| Supplier Device Package | 6-TDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TSM250N02DCQ RFG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM250N02DCQ RFG
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 620mW |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 775pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
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