TSM2537CQ RFG
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
Transistors Fets Mosfets Arrays
6-VDFN Exposed Pad
Active
$1.50 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM2537CQ RFG |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 9.1nC @ 4.5V, 9.8nC @ 4.5V |
| Input Capacitance (Ciss) | 677pF @ 10V, 744pF @ 10V |
| Power Dissipation (Max) | 6.25W |
| Supplier Device Package | 6-TDFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TSM2537CQ RFG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM2537CQ RFG
Alternatives & Replacements
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 6.25W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 4.5V, 9.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 677pF @ 10V, 744pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc), 9A (Tc) |
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