Rochester Electronics, LLC6-VDFN Exposed PadRoHS
UPA2650T1E-E2-AT
POWER, N-CHANNEL MOSFET
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
6-VDFN Exposed Pad
Status
Obsolete
$0.49 / unit (market reference)
MOQ: 607 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2650T1E-E2-AT |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 65mOhm @ 3A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 2.9nC @ 4.5V |
| Input Capacitance (Ciss) | 220pF @ 10V |
| Power Dissipation (Max) | 1.1W |
| Supplier Device Package | 6-MLP (3x3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2650T1E-E2-AT by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 65mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.1W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
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