FDMA1025P
POWER FIELD-EFFECT TRANSISTOR, 3
Transistors Fets Mosfets Arrays
6-VDFN Exposed Pad
PowerTrench®
Active
$0.27 / unit (market reference)
MOQ: 1128 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMA1025P |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 155mOhm @ 3.1A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 4.8nC @ 4.5V |
| Input Capacitance (Ciss) | 450pF @ 10V |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | 6-MicroFET (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMA1025P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 155mOhm @ 3.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMA1025P
Alternatives & Replacements
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POWER, N-CHANNEL MOSFET
NTLGD3502NT2G
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TSM250N02DCQ RFG
MOSFET 2 N-CH 20V 5.8A 6TDFN
TSM500P02DCQ RFG
MOSFET 2 P-CH 20V 4.7A 6TDFN
NTLGD3502NT1G
MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
TSM2537CQ RFG
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 700mW |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
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