TSM10N06CP ROG
MOSFET N-CHANNEL 60V 10A TO252
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Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM10N06CP ROG |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 65mOhm @ 10A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1100 pF @ 30 V |
| Power Dissipation (Max) | 45W (Tc) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | TO-252, (D-Pak) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TSM10N06CP ROG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 65mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM10N06CP ROG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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