FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerTrench®
Active
Price available on request
MOQ: 731 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDD8451 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 24mOhm @ 9A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 20 nC @ 10 V |
| Input Capacitance (Ciss) | 990 pF @ 20 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | TO-252, (D-Pak) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDD8451 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 24mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDD8451
Alternatives & Replacements
View All →SFT1423-S-TL-E
MOSFET N-CH 500V 2A TP-FA
NTD23N03RT4G
MOSFET N-CH 25V 3.8A/17.1A DPAK
FDD8780
POWER FIELD-EFFECT TRANSISTOR, 3
NTD4815NHT4G
MOSFET N-CH 30V 6.9A/35A DPAK
NTD70N03RT4G
MOSFET N-CH 25V 10A/32A DPAK
FDD6796A
MOSFET N-CH 25V 20A/40A TO252
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 28A (Tc) |
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