PC
onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NTD70N03RT4G

MOSFET N-CH 25V 10A/32A DPAK

NTD70N03RT4G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

$0.37 / unit (market reference)

MOQ: 802 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTD70N03RT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)8mOhm @ 20A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)13.2 nC @ 5 V
Input Capacitance (Ciss)1333 pF @ 20 V
Power Dissipation (Max)1.36W (Ta), 62.5W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD70N03RT4G by onsemi is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Power Dissipation (Max)1.36W (Ta), 62.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs13.2 nC @ 5 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds1333 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 32A (Tc)

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