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onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NTD23N03RT4G

MOSFET N-CH 25V 3.8A/17.1A DPAK

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

$0.10 / unit (market reference)

MOQ: 2885 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
Brandonsemi
ModelNTD23N03RT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)45mOhm @ 6A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)3.76 nC @ 4.5 V
Input Capacitance (Ciss)225 pF @ 20 V
Power Dissipation (Max)1.14W (Ta), 22.3W (Tc)
Drive Voltage4V, 5V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD23N03RT4G by onsemi is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 6A, 10V
Power Dissipation (Max)1.14W (Ta), 22.3W (Tc)
Gate Charge (Qg) (Max) @ Vgs3.76 nC @ 4.5 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds225 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta), 17.1A (Tc)

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