PC
onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NTD4815NHT4G

MOSFET N-CH 30V 6.9A/35A DPAK

NTD4815NHT4G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

$0.07 / unit (market reference)

MOQ: 4121 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTD4815NHT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)15mOhm @ 30A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)6.8 nC @ 4.5 V
Input Capacitance (Ciss)845 pF @ 12 V
Power Dissipation (Max)1.26W (Ta), 32.6W (Tc)
Drive Voltage4.5V, 11.5V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NTD4815NHT4G by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
Power Dissipation (Max)1.26W (Ta), 32.6W (Tc)
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds845 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta), 35A (Tc)

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