PC
Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

SFR9110TF

MOSFET P-CH 100V 2.8A DPAK

SFR9110TF by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

$0.52 / unit (market reference)

MOQ: 577 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelSFR9110TF
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)1.2Ohm @ 1.4A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)10 nC @ 10 V
Input Capacitance (Ciss)335 pF @ 25 V
Power Dissipation (Max)2.5W (Ta), 20W (Tc)
Drive Voltage10V
Supplier Device PackageTO-252, (D-Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

SFR9110TF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 1.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.4A, 10V
Power Dissipation (Max)2.5W (Ta), 20W (Tc)
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds335 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)

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