PC
onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NVDS015N15MCT4G

PTNG 150V 15MOHM DPAK AUTOMOTIVE

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

PowerTrench®

Status

Active

$1.13 / unit (market reference)

MOQ: 2500 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNVDS015N15MCT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)15mOhm @ 29A, 10V
Vgs(th) (Max)4.5V @ 162µA
Gate Charge (Qg)27 nC @ 10 V
Input Capacitance (Ciss)2120 pF @ 75 V
Power Dissipation (Max)3.1W (Ta), 107.1W (Tc)
Drive Voltage10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusActive

Application & Notes

NVDS015N15MCT4G by onsemi is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 29A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 162µA
Rds On (Max) @ Id, Vgs15mOhm @ 29A, 10V
Power Dissipation (Max)3.1W (Ta), 107.1W (Tc)
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds2120 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10.5A (Ta), 61.3A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.