PC
onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NDD03N50ZT4G

MOSFET N-CH 500V 2.6A DPAK

NDD03N50ZT4G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

$0.27 / unit (market reference)

MOQ: 1110 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNDD03N50ZT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)3.3Ohm @ 1.15A, 10V
Vgs(th) (Max)4.5V @ 50µA
Gate Charge (Qg)16 nC @ 10 V
Input Capacitance (Ciss)329 pF @ 25 V
Power Dissipation (Max)58W (Tc)
Drive Voltage10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NDD03N50ZT4G by onsemi is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.3Ohm @ 1.15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 50µA
Rds On (Max) @ Id, Vgs3.3Ohm @ 1.15A, 10V
Power Dissipation (Max)58W (Tc)
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds329 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)

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