PC
Infineon TechnologiesTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

IRLR3714TRPBF

MOSFET N-CH 20V 36A DPAK

IRLR3714TRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandInfineon Technologies
ModelIRLR3714TRPBF
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)20mOhm @ 18A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)9.7 nC @ 4.5 V
Input Capacitance (Ciss)670 pF @ 10 V
Power Dissipation (Max)47W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageD-Pak
RoHSRoHS
Part StatusObsolete

Application & Notes

IRLR3714TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 18A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs20mOhm @ 18A, 10V
Power Dissipation (Max)47W (Tc)
Gate Charge (Qg) (Max) @ Vgs9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.