IPD25N06S4L30ATMA1
MOSFET N-CH 60V 25A TO252-31
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
OptiMOS™
Discontinued at Digi-Key
$0.21 / unit (market reference)
MOQ: 178 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPD25N06S4L30ATMA1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 30mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2.2V @ 8µA |
| Gate Charge (Qg) | 16.3 nC @ 10 V |
| Input Capacitance (Ciss) | 1220 pF @ 25 V |
| Power Dissipation (Max) | 29W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-TO252-3-11 |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
IPD25N06S4L30ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPD25N06S4L30ATMA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 25A, 10V |
| Power Dissipation (Max) | 29W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
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