PC
Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

FQD4N25TM

MOSFET N-CH 250V 3A DPAK

FQD4N25TM by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

QFET®

Status

Obsolete

$0.24 / unit (market reference)

MOQ: 1255 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQD4N25TM
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)1.75Ohm @ 1.5A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)5.6 nC @ 10 V
Input Capacitance (Ciss)200 pF @ 25 V
Power Dissipation (Max)2.5W (Ta), 37W (Tc)
Drive Voltage10V
Supplier Device PackageTO-252, (D-Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

FQD4N25TM by Rochester Electronics, LLC is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.75Ohm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs1.75Ohm @ 1.5A, 10V
Power Dissipation (Max)2.5W (Ta), 37W (Tc)
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.