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Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

FDD6512A

MOSFET N-CH 20V 10.7A/36A DPAK

FDD6512A by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

PowerTrench®

Status

Obsolete

Datasheet

View Datasheet ↗

$0.41 / unit (market reference)

MOQ: 740 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDD6512A
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)21mOhm @ 10.7A, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)19 nC @ 4.5 V
Input Capacitance (Ciss)1082 pF @ 10 V
Power Dissipation (Max)3.8W (Ta), 43W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageTO-252, (D-Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDD6512A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21mOhm @ 10.7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDD6512A

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs21mOhm @ 10.7A, 4.5V
Power Dissipation (Max)3.8W (Ta), 43W (Tc)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1082 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta), 36A (Tc)

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