PartsCubeGlobal
Comchip TechnologyTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

CMS35P03D-HF

MOSFET P-CH 30V 8.5A/34A DPAK

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

Price available on request

MOQ: 2500 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandComchip Technology
ModelCMS35P03D-HF
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)25mOhm @ 15A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)12.5 nC @ 4.5 V
Input Capacitance (Ciss)1345 pF @ 15 V
Power Dissipation (Max)2W (Ta), 34W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageD-PAK (TO-252)
RoHSRoHS
Part StatusObsolete

Application & Notes

CMS35P03D-HF by Comchip Technology is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

SFT1423-S-TL-Eonsemi

MOSFET N-CH 500V 2A TP-FA

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs25mOhm @ 15A, 10V
Power Dissipation (Max)2W (Ta), 34W (Tc)
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1345 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 34A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.