AUIRFR1010Z
AUIRFR1010 - 55V-60V N-CHANNEL A
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
HEXFET®
Active
$1.03 / unit (market reference)
MOQ: 291 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | AUIRFR1010Z |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 7.5mOhm @ 42A, 10V |
| Vgs(th) (Max) | 4V @ 100µA |
| Gate Charge (Qg) | 95 nC @ 10 V |
| Input Capacitance (Ciss) | 2840 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Supplier Device Package | D-PAK (TO-252AA) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AUIRFR1010Z by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5mOhm @ 42A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for AUIRFR1010Z
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V |
| Power Dissipation (Max) | 140W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
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