IRFH4257DTRPBF
IRFH4257 - HEXFET POWER MOSFET
Transistors Fets Mosfets Arrays
8-PowerVDFN
HEXFET®
Active
$0.91 / unit (market reference)
MOQ: 331 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFH4257DTRPBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 3.4mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2.1V @ 35µA |
| Gate Charge (Qg) | 15nC @ 4.5V |
| Input Capacitance (Ciss) | 1321pF @ 13V |
| Power Dissipation (Max) | 25W, 28W |
| Supplier Device Package | Dual PQFN (5x4) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFH4257DTRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.4mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFH4257DTRPBF
Alternatives & Replacements
View All →FDM3300NZ
N-CHANNEL POWER MOSFET
FDMC3300NZA
N-CHANNEL POWER MOSFET
CSD85312Q3E
MOSFET 2N-CH 20V 39A 8VSON
DMN2022UNS-7
MOSFET 2 N-CH 20V POWERDI3333-8
G33N03D3
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
BSZ0909NDXTMA1
MOSFET 2N-CH 30V 20A WISON-8
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 25W, 28W |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1321pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 25A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.