CSD85312Q3E
MOSFET 2N-CH 20V 39A 8VSON
Transistors Fets Mosfets Arrays
8-PowerVDFN
NexFET™
Active
$1.04 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD85312Q3E |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Source |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 12.4mOhm @ 10A, 8V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) | 2390pF @ 10V |
| Power Dissipation (Max) | 2.5W |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD85312Q3E by Texas Instruments is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12.4mOhm @ 10A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD85312Q3E
Alternatives & Replacements
View All →FDM3300NZ
N-CHANNEL POWER MOSFET
FDMC3300NZA
N-CHANNEL POWER MOSFET
DMN2022UNS-7
MOSFET 2 N-CH 20V POWERDI3333-8
G33N03D3
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
BSZ0909NDXTMA1
MOSFET 2N-CH 30V 20A WISON-8
IAUC60N04S6L045HATMA1
IAUC60N04S6L045HATMA1
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate, 5V Drive |
| Power - Max | 2.5W |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 10A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.