Diodes Incorporated8-PowerVDFNRoHS
DMN2022UNS-7
MOSFET 2 N-CH 20V POWERDI3333-8
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerVDFN
Status
Active
Datasheet
$0.65 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN2022UNS-7 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 10.8mOhm @ 4A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 20.3nC @ 4.5V |
| Input Capacitance (Ciss) | 1870pF @ 10V |
| Power Dissipation (Max) | 1.2W |
| Supplier Device Package | PowerDI3333-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN2022UNS-7 by Diodes Incorporated is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.8mOhm @ 4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN2022UNS-7
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Power - Max | 1.2W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20.3nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) |
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