BSZ0909NDXTMA1
MOSFET 2N-CH 30V 20A WISON-8
Transistors Fets Mosfets Arrays
8-PowerVDFN
OptiMOS™
Last Time Buy
$1.54 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSZ0909NDXTMA1 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 18mOhm @ 9A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 2.6nC @ 4.5V |
| Input Capacitance (Ciss) | 360pF @ 15V |
| Power Dissipation (Max) | 17W |
| Supplier Device Package | PG-WISON-8 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
BSZ0909NDXTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 18mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSZ0909NDXTMA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 17W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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