DMN2028UFDH-7
MOSFET 2N-CH 20V 6.8A POWERDI
Transistors Fets Mosfets Arrays
8-PowerVDFN
Automotive, AEC-Q101
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN2028UFDH-7 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 20mOhm @ 4A, 10V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 8.5nC @ 4.5V |
| Input Capacitance (Ciss) | 151pF @ 10V |
| Power Dissipation (Max) | 1.1W |
| Supplier Device Package | PowerDI3030-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN2028UFDH-7 by Diodes Incorporated is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN2028UFDH-7
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MOSFET 2N-CH 30V 20A WISON-8
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Power - Max | 1.1W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 151pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A |
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