ZXMC3AM832TA
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Transistors Fets Mosfets Arrays
8-VDFN Exposed Pad
Obsolete
$0.67 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZXMC3AM832TA |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 120mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 1V @ 250µA (Min) |
| Gate Charge (Qg) | 3.9nC @ 10V |
| Input Capacitance (Ciss) | 190pF @ 25V |
| Power Dissipation (Max) | 1.7W |
| Supplier Device Package | 8-MLP (3x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
ZXMC3AM832TA by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZXMC3AM832TA
Alternatives & Replacements
View All →NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8MICRO
AONX38168
25V DUAL ASYMMETRIC N-CHANNEL XS
DMT3011LDT-7
MOSFET 2N-CH 30V 8A V-DFN3030-8
All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 1.7W |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
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