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onsemi8-VDFN Exposed PadRoHS

NTLTD7900ZR2G

MOSFET 2N-CH 20V 6A 8MICRO

Subcategory

Transistors Fets Mosfets Arrays

Package

8-VDFN Exposed Pad

Status

Obsolete

$0.27 / unit (market reference)

MOQ: 1110 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
Brandonsemi
ModelNTLTD7900ZR2G
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)26mOhm @ 6.5A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)18nC @ 4.5V
Input Capacitance (Ciss)15pF @ 16V
Power Dissipation (Max)1.5W
Supplier Device Package8-DFN (3x3), (MICRO8 LEADLESS)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTLTD7900ZR2G by onsemi is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 26mOhm @ 6.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max1.5W
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs26mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds15pF @ 16V
Current - Continuous Drain (Id) @ 25°C6A

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