onsemi8-VDFN Exposed PadRoHS
NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8MICRO
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-VDFN Exposed Pad
Status
Obsolete
$0.27 / unit (market reference)
MOQ: 1110 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTLTD7900ZR2G |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 26mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 18nC @ 4.5V |
| Input Capacitance (Ciss) | 15pF @ 16V |
| Power Dissipation (Max) | 1.5W |
| Supplier Device Package | 8-DFN (3x3), (MICRO8 LEADLESS) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTLTD7900ZR2G by onsemi is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 26mOhm @ 6.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.5W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
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