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Alpha & Omega Semiconductor Inc.8-VDFN Exposed PadRoHS

AONX38168

25V DUAL ASYMMETRIC N-CHANNEL XS

Subcategory

Transistors Fets Mosfets Arrays

Package

8-VDFN Exposed Pad

Series

XSPairFET™

Status

Active

$1.80 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAONX38168
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)25V
Rds On (Max)3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Vgs(th) (Max)1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg)24nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss)1.15nF @ 12.5V, 4.52nF @ 12.5V
Power Dissipation (Max)3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Supplier Device Package8-DFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

AONX38168 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Power - Max3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id1.9V @ 250µA, 1.8V @ 250µA
Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V, 85nC @ 10V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds1.15nF @ 12.5V, 4.52nF @ 12.5V
Current - Continuous Drain (Id) @ 25°C25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)

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