Alpha & Omega Semiconductor Inc.8-VDFN Exposed PadRoHS
AONX38168
25V DUAL ASYMMETRIC N-CHANNEL XS
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-VDFN Exposed Pad
Series
XSPairFET™
Status
Active
$1.80 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AONX38168 |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V |
| Vgs(th) (Max) | 1.9V @ 250µA, 1.8V @ 250µA |
| Gate Charge (Qg) | 24nC @ 10V, 85nC @ 10V |
| Input Capacitance (Ciss) | 1.15nF @ 12.5V, 4.52nF @ 12.5V |
| Power Dissipation (Max) | 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) |
| Supplier Device Package | 8-DFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AONX38168 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 1.9V @ 250µA, 1.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V, 85nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1.15nF @ 12.5V, 4.52nF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) |
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