US6M2TR
MOSFET N/P-CH 30V/20V TUMT6
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Active
$0.71 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | US6M2TR |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Rds On (Max) | 240mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 2.2nC @ 4.5V |
| Input Capacitance (Ciss) | 80pF @ 10V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | TUMT6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
US6M2TR by Rohm Semiconductor is an N-channel power MOSFET rated at 30V, 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 240mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for US6M2TR
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A, 1A |
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