MCH6626-TL-E
PCH+NCH 2.5V DRIVE SERIES
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Obsolete
Price available on request
MOQ: 2885 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | MCH6626-TL-E |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 230mOhm @ 800mA, 4V |
| Gate Charge (Qg) | 1.4nC @ 4V |
| Input Capacitance (Ciss) | 105pF @ 10V |
| Power Dissipation (Max) | 800mW |
| Supplier Device Package | 6-MCPH |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
MCH6626-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 230mOhm @ 800mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for MCH6626-TL-E
Alternatives & Replacements
View All →MCH6660-TL-H
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VT6M1T2CR
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MCH6605-TL-E
MOSFET 2P-CH 50V 0.14A MCPH6
MCH6613-TL-E
MOSFET N/P-CH 30V MCPH6
All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 800mW |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 800mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 105pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A, 1A |
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