VT6M1T2CR
MOSFET N/P-CH 20V 0.1A VMT6
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Active
$0.37 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | VT6M1T2CR |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 3.5Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) | 1V @ 100µA |
| Input Capacitance (Ciss) | 7.1pF @ 10V |
| Power Dissipation (Max) | 120mW |
| Supplier Device Package | VMT6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VT6M1T2CR by Rohm Semiconductor is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5Ohm @ 100mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VT6M1T2CR
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Power - Max | 120mW |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
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