US6M11TR
MOSFET N/P-CH 20V/12V TUMT6
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Active
$0.61 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | US6M11TR |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V, 12V |
| Rds On (Max) | 180mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 1.8nC @ 4.5V |
| Input Capacitance (Ciss) | 110pF @ 10V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | TUMT6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
US6M11TR by Rohm Semiconductor is an N-channel power MOSFET rated at 20V, 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 180mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for US6M11TR
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V, 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A, 1.3A |
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