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Taiwan Semiconductor Corporation8-SOIC (0.154", 3.90mm Width)RoHS

TSM4806CS RLG

MOSFET N-CHANNEL 20V 28A 8SOP

TSM4806CS RLG by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

8-SOIC (0.154", 3.90mm Width)

Status

Active

$0.41 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM4806CS RLG
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)20mOhm @ 20A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)12.3 nC @ 4.5 V
Input Capacitance (Ciss)961 pF @ 15 V
Power Dissipation (Max)2W (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device Package8-SOP
RoHSRoHS
Part StatusActive

Application & Notes

TSM4806CS RLG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 20A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs20mOhm @ 20A, 4.5V
Power Dissipation (Max)2W (Ta)
Gate Charge (Qg) (Max) @ Vgs12.3 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds961 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C28A (Ta)

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