HUF75631SK8T
MOSFET N-CH 100V 5.5A 8SOIC
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
UltraFET™
Obsolete
$1.01 / unit (market reference)
MOQ: 298 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HUF75631SK8T |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 39mOhm @ 5.5A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 79 nC @ 20 V |
| Input Capacitance (Ciss) | 1225 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HUF75631SK8T by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 39mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HUF75631SK8T
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
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