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Rochester Electronics, LLC8-SOIC (0.154", 3.90mm Width)RoHS

FDS8876

MOSFET N-CH 30V 12.5A 8SOIC

Subcategory

Transistors Fets Mosfets Single

Package

8-SOIC (0.154", 3.90mm Width)

Series

PowerTrench®

Status

Active

$0.46 / unit (market reference)

MOQ: 654 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDS8876
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)8.2mOhm @ 12.5A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)36 nC @ 10 V
Input Capacitance (Ciss)1650 pF @ 15 V
Power Dissipation (Max)2.5W (Ta)
Drive Voltage4.5V, 10V
Supplier Device Package8-SOIC
RoHSRoHS
Part StatusActive

Application & Notes

FDS8876 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.2mOhm @ 12.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs8.2mOhm @ 12.5A, 10V
Power Dissipation (Max)2.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)

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