TSM1N45DCS RLG
MOSFET N-CH 450V 500MA 8SOP
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM1N45DCS RLG |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 450 V |
| Rds On (Max) | 4.25Ohm @ 250mA, 10V |
| Vgs(th) (Max) | 4.9V @ 250mA |
| Gate Charge (Qg) | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) | 185 pF @ 25 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-SOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TSM1N45DCS RLG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 450 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.25Ohm @ 250mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM1N45DCS RLG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±50V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.9V @ 250mA |
| Rds On (Max) @ Id, Vgs | 4.25Ohm @ 250mA, 10V |
| Power Dissipation (Max) | 900mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 450 V |
| Input Capacitance (Ciss) (Max) @ Vds | 185 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
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