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STMicroelectronicsTO-263-7, D²Pak (6 Leads + Tab)RoHS

STH250N55F3-6

MOSFET N-CH 55V 180A H2PAK

STH250N55F3-6 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

STripFET™ III

Status

Obsolete

$5.51 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTH250N55F3-6
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)2.6mOhm @ 60A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)100 nC @ 10 V
Input Capacitance (Ciss)6800 pF @ 25 V
Power Dissipation (Max)300W (Tc)
Drive Voltage10V
Supplier Device PackageH²PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

STH250N55F3-6 by STMicroelectronics is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.6mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs2.6mOhm @ 60A, 10V
Power Dissipation (Max)300W (Tc)
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C180A (Tc)

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