PC
Rochester Electronics, LLCTO-263-7, D²Pak (6 Leads + Tab)RoHS

NP161N04TUG-E1-AY

MOSFET N-CH 40V 160A TO263-7

NP161N04TUG-E1-AY by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Status

Obsolete

$3.55 / unit (market reference)

MOQ: 85 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelNP161N04TUG-E1-AY
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)1.8mOhm @ 80A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)345 nC @ 10 V
Input Capacitance (Ciss)20.25 pF @ 25 V
Power Dissipation (Max)1.8W (Ta), 250W (Tc)
Supplier Device PackageTO-263-7
RoHSRoHS
Part StatusObsolete

Application & Notes

NP161N04TUG-E1-AY by Rochester Electronics, LLC is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.8mOhm @ 80A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs1.8mOhm @ 80A, 10V
Power Dissipation (Max)1.8W (Ta), 250W (Tc)
Gate Charge (Qg) (Max) @ Vgs345 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds20.25 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C160A (Tc)

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