Infineon TechnologiesTO-263-7, D²Pak (6 Leads + Tab)RoHS
IPB240N03S4LR9ATMA1
MOSFET N-CH 30V 240A TO263-7
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-263-7, D²Pak (6 Leads + Tab)
Series
Automotive, AEC-Q101, OptiMOS™
Status
Active
$2.02 / unit (market reference)
MOQ: 149 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPB240N03S4LR9ATMA1 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 0.92mOhm @ 100A, 10V |
| Vgs(th) (Max) | 2.2V @ 180µA |
| Gate Charge (Qg) | 300 nC @ 10 V |
| Input Capacitance (Ciss) | 20300 pF @ 25 V |
| Power Dissipation (Max) | 231W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-TO263-7-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPB240N03S4LR9ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 0.92mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 180µA |
| Rds On (Max) @ Id, Vgs | 0.92mOhm @ 100A, 10V |
| Power Dissipation (Max) | 231W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
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