STGP30H60DFB
TRENCH GATE FIELD-STOP IGBT, HB
Transistors Igbts Single
TO-220-3
Active
$3.08 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGP30H60DFB |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 260 W |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGP30H60DFB by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGP30H60DFB
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IRGB4B60K - IGBT WITH ULTRAFAST
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SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 149 nC |
| Power - Max | 260 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 383µJ (on), 293µJ (off) |
| Td (on/off) @ 25°C | 37ns/146ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Reverse Recovery Time (trr) | 53 ns |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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