SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
Transistors Igbts Single
TO-220-3
Active
$1.00 / unit (market reference)
MOQ: 301 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | SGP10N60A |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 92 W |
| Supplier Device Package | PG-TO220-3-1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SGP10N60A by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGP10N60A
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 52 nC |
| Power - Max | 92 W |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Switching Energy | 320µJ |
| Td (on/off) @ 25°C | 28ns/178ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 10A |
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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