IRGB4B60KD1PBF
IGBT NPT 600V 11A TO220AB
Transistors Igbts Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRGB4B60KD1PBF |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 63 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRGB4B60KD1PBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRGB4B60KD1PBF
Alternatives & Replacements
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N-CHANNEL IGBT
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SGP40N60UFTU
N-CHANNEL IGBT
SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
IRGB4060DPBF
IGBT, 16A I(C), 600V V(BR)CES, N
All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 12 nC |
| Power - Max | 63 W |
| Test Condition | 400V, 4A, 100Ohm, 15V |
| Switching Energy | 73µJ (on), 47µJ (off) |
| Td (on/off) @ 25°C | 22ns/100ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 4A |
| Reverse Recovery Time (trr) | 93 ns |
| Current - Collector (Ic) (Max) | 11 A |
| Current - Collector Pulsed (Icm) | 22 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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