STGD10NC60ST4
IGBT 600V 18A 60W DPAK
;;2.jpg)
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerMESH™
Obsolete
$2.21 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGD10NC60ST4 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 60 W |
| Supplier Device Package | DPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
STGD10NC60ST4 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGD10NC60ST4
Alternatives & Replacements
View All →NGTB10N60R2DT4G
IGBT 600V 20A DPAK
FGD3N60LSDTM-T-FS
IGBT, 6A, 600V, N-CHANNEL
NGD15N41ACLT4G
INSULATED GATE BIPOLAR TRANSISTO
SGR15N40LTF
IGBT, 400V, N-CHANNEL, TO-252
SGR6N60UFTF
N-CHANNEL IGBT
NGD8205NT4G
IGBT 390V 20A 125W DPAK
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 18 nC |
| Power - Max | 60 W |
| Test Condition | 390V, 5A, 10Ohm, 15V |
| Switching Energy | 60µJ (on), 340µJ (off) |
| Td (on/off) @ 25°C | 19ns/160ns |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 5A |
| Current - Collector (Ic) (Max) | 18 A |
| Current - Collector Pulsed (Icm) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.