NGD15N41ACLT4G
INSULATED GATE BIPOLAR TRANSISTO
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
$0.53 / unit (market reference)
MOQ: 566 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NGD15N41ACLT4G |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 107 W |
| Supplier Device Package | TO-252, (D-Pak) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NGD15N41ACLT4G by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NGD15N41ACLT4G
Alternatives & Replacements
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IGBT, 6A, 600V, N-CHANNEL
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IGBT, 400V, N-CHANNEL, TO-252
SGR6N60UFTF
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NGD8205NT4G
IGBT 390V 20A 125W DPAK
SGR6N60UFTM
N-CHANNEL IGBT
All Technical Specifications
| Input Type | Logic |
| Power - Max | 107 W |
| Test Condition | 300V, 6.5A, 1kOhm |
| Td (on/off) @ 25°C | -/4µs |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 4V, 10A |
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 440 V |
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