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onsemiTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

NGTB10N60R2DT4G

IGBT 600V 20A DPAK

Subcategory

Transistors Igbts Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Obsolete

Datasheet

https://www.onsemi.com/pdf/datasheet/ngtb10n60r2dt4g-d.pdf

$0.58 / unit (market reference)

MOQ: 516 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
Brandonsemi
ModelNGTB10N60R2DT4G
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
Power Dissipation (Max)72 W
Supplier Device PackageDPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

NGTB10N60R2DT4G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Input TypeStandard
Gate Charge53 nC
Power - Max72 W
Test Condition300V, 10A, 30Ohm, 15V
Switching Energy412µJ (on), 140µJ (off)
Td (on/off) @ 25°C48ns/120ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 10A
Reverse Recovery Time (trr)90 ns
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)40 A
Voltage - Collector Emitter Breakdown (Max)600 V

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