STGD10NC60HT4
IGBT 600V 20A 60W DPAK
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Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerMESH™
Active
$1.47 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGD10NC60HT4 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 60 W |
| Supplier Device Package | DPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGD10NC60HT4 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGD10NC60HT4
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 19.2 nC |
| Power - Max | 60 W |
| Test Condition | 390V, 5A, 10Ohm, 15V |
| Switching Energy | 31.8µJ (on), 95µJ (off) |
| Td (on/off) @ 25°C | 14.2ns/72ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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