SGP30N60
IGBT, 41A, 600V, N-CHANNEL
Transistors Igbts Single
TO-220-3
Active
$1.89 / unit (market reference)
MOQ: 159 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | SGP30N60 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 250 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SGP30N60 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGP30N60
Alternatives & Replacements
View All →HGTP3N60A4
N-CHANNEL IGBT
HGTP12N60A4D
INSULATED GATE BIPOLAR TRANSISTO
SGP30N60HSXKSA1
IGBT 600V 41A 250W TO220-3
IRGB4B60KD1PBF
IRGB4B60K - IGBT WITH ULTRAFAST
SGP40N60UFTU
N-CHANNEL IGBT
SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 140 nC |
| Power - Max | 250 W |
| Test Condition | 400V, 30A, 11Ohm, 15V |
| Switching Energy | 1.29mJ |
| Td (on/off) @ 25°C | 44ns/291ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 41 A |
| Current - Collector Pulsed (Icm) | 112 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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