RJK0351DPA-00#J0
MOSFET N-CH 30V 40A 8WPAK
Transistors Fets Mosfets Single
8-PowerWDFN
Obsolete
$0.85 / unit (market reference)
MOQ: 352 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK0351DPA-00#J0 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 4.2mOhm @ 20A, 10V |
| Gate Charge (Qg) | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) | 2560 pF @ 10 V |
| Power Dissipation (Max) | 45W (Tc) |
| Supplier Device Package | 8-WPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK0351DPA-00#J0 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.2mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK0351DPA-00#J0
Alternatives & Replacements
View All →RJK03M9DNS-00#J5
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FDMC8327L
POWER FIELD-EFFECT TRANSISTOR, 1
FDMC8884
9A, 30V, 0.019OHM, N-CHANNEL POW
NTTFS4928NTWG
MOSFET N-CH 30V 7.3A/37A 8WDFN
RJK03C0DPA-00#J53
MOSFET N-CH 30V 70A 8WPAK
FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
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