Rochester Electronics, LLC8-PowerWDFNRoHS
RJK03M9DNS-00#J5
MOSFET N-CH 30V 14A 8HWSON
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerWDFN
Status
Obsolete
Datasheet
$0.38 / unit (market reference)
MOQ: 800 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK03M9DNS-00#J5 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 11.1mOhm @ 7A, 10V |
| Gate Charge (Qg) | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 980 pF @ 10 V |
| Power Dissipation (Max) | 10W (Tc) |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK03M9DNS-00#J5 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.1mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK03M9DNS-00#J5
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 7A, 10V |
| Power Dissipation (Max) | 10W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
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