FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33
Transistors Fets Mosfets Single
8-PowerWDFN
Active
$0.48 / unit (market reference)
MOQ: 628 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMC86106LZ |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 103mOhm @ 3.3A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 6 nC @ 10 V |
| Input Capacitance (Ciss) | 310 pF @ 50 V |
| Power Dissipation (Max) | 2.3W (Ta), 19W (Tc) |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMC86106LZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 103mOhm @ 3.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMC86106LZ
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 3.3A, 10V |
| Power Dissipation (Max) | 2.3W (Ta), 19W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 50 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta), 7.5A (Tc) |
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