PC
Rochester Electronics, LLCSC-101, SOT-883RoHS

PMZB790SN,315

MOSFET N-CH 60V 650MA DFN1006B-3

PMZB790SN,315 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SC-101, SOT-883

Status

Obsolete

$0.09 / unit (market reference)

MOQ: 3206 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelPMZB790SN,315
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)940mOhm @ 300mA, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)1.37 nC @ 10 V
Input Capacitance (Ciss)35 pF @ 30 V
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDFN1006B-3
RoHSRoHS
Part StatusObsolete

Application & Notes

PMZB790SN,315 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 940mOhm @ 300mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs940mOhm @ 300mA, 10V
Power Dissipation (Max)360mW (Ta), 2.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs1.37 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds35 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C650mA (Ta)

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